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| Advanced Technical Information HiPerFREDTM Epitaxial Diode dual diode, common cathode MEK 600-04 DA VRRM = 400 V IFAVM = 880 A trr = 220 ns VRSM V 400 VRRM V 400 Type 1 2 3 1 2 3 MEK 600-04DA Symbol IFAVM IFAVM IFSM TVJ Tstg Ptot VISOL Md a Conditions TC = 25C; rectangular, d = 0.5 TC = 80C; rectangular, d = 0.5 TVJ = 25C; t = 10 ms (50 Hz), sine Maximum Ratings 880 575 tbd -40...+150 -40...+125 A A A C C W V~ Nm/lb.in. Nm/lb.in. m/s2 Features * HiPerFREDTM diode chips - fast reverse recovery - low operating forward voltage - low leakage current - avalanche capability * Industry Standard package - with isolated DCB ceramic base plate - UL registered E72873 Applications * Topologies - dual diode with common cathode - high current single diode with pins 1 and 3 paralleled * Circuits - free wheeling diode of choppers, H-bridges, phaselegs etc. - secondary rectifier for switched mode power supplies, welders etc. Dimensions in mm (1 mm = 0.0394") TC = 25C 50/60 Hz, RMS; IISOL 1 mA Mounting torque with screw M5 Terminal connection torque Allowable acceleration 1100 3600 2.25-2.75/20-25 4.5-5.5/40-48 50 Symbol IR VF trr IRM RthJS RthJC dS dA Weight Conditions min. TVJ = 25C VR = VRRM TVJ = 125C VR = VRRM IF = 400 A; TVJ = 125C TVJ = 25C Characteristic Values typ. max. 6 6 1.1 1.4 220 80 0.11 0.22 mA mA V V ns A K/W K/W mm mm 150 g VR = 100 V; -diF/dt = 900 A/s IF = 400 A; TVJ = 125C Creeping distance on surface Strike distance through air 12.7 9.6 Data according to IEC 60747 (c) 2000 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 1-1 010 |
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